Correlation of Superlattice Cross-Plane Thermal Conductivity with Emission Wavelength in InAlAs/InGaAs Quantum Cascade Lasers.

The low cross-plane thermal conductivity of quantum cascade lasers (QCLs) is a significant limitation in their Continuous-Wave (CW) performance. Structural parameters such as individual layer thicknesses and interface density vary for QCLs with different target emission wavelengths, and these design parameters are expected to influence the cross-plane thermal conductivity. Though previous works have used theoretical models and experimental data to quantify thermal conductivity, the correlation between target wavelength and thermal conductivity has yet to be reported for QCLs. In this work, we observe a general trend across a group of QCLs emitting from 3.7 to 8.7 µm: as the QCL design changes to reduce wavelength, the thermal conductivity decreases as well. Numerically, we measured an approximate 70% reduction in thermal conductivity, from 1.5 W/(m·K) for the 8.7 µm device, to 0.9 W/(m·K) for the 3.7 µm device. Analysis of these structures with the Diffuse Mismatch Model (DMM) for thermal boundary resistance (TBR) shows that the largest contribution of this effect is the impact of superlattice interface density on the thermal conductivity. The observed changes in conductivity result in significant changes in projected CW optical power and should be considered in laser design.

Acousto-optically modulated quantum cascade laser for high-temperature reacting systems thermometry.

We demonstrate time-resolved temperature measurements in shock-heated mixtures of carbon monoxide over a temperature range of 1000-1800 K for two pressure ranges, 2.0-2.9 atm and 7.6-10.7 atm, at rates up to 250 kHz using a single acousto-optically modulated quantum cascade laser with mid-infrared output spanning from 1975 to 2260 cm-1. Measured temperatures were in excellent agreement with values determined by ideal shock relations, and the temperature profile after the passage of the reflected shock wave was found to be well-modeled by an isentropic compression assumption. Temperature measurements made with this setup are largely immune to effects of emissions and beam steering, making the diagnostic system well-suited for studying high-temperature gas-phase reactions of energetic materials such as octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine and hexahydro-1,3,5-trinitro-1,3,5-triazine.

InP-based quantum cascade lasers monolithically integrated onto silicon.

Lasing is reported for ridge-waveguide devices processed from a 40-stage InP-based quantum cascade laser structure grown on a 6-inch silicon substrate with a metamorphic buffer. The structure used in the proof-of-concept experiment had a typical design, including an Al0.78In0.22As/In0.73Ga0.27As strain-balanced composition, with high strain both in quantum wells and barriers relative to InP, and an all-InP waveguide with a total thickness of 8 µm. Devices of size 3 mm x 40 µm, with a high-reflection back facet coating, emitted at 4.35 µm and had a threshold current of approximately 2.2 A at 78 K. Lasing was observed up to 170 K. Compared to earlier demonstrated InP-based quantum cascade lasers monolithically integrated onto GaAs, the same laser structure integrated on silicon had a lower yield and reliability. Surface morphology analysis suggests that both can be significantly improved by reducing strain for the active region layers relative to InP bulk waveguide layers surrounding the laser core.

Progress in high-power continuous-wave quantum cascade lasers [Invited].

Multi-watt continuous-wave room temperature operation with efficiency exceeding 10% has been demonstrated for quantum cascade lasers essentially in the entire mid-wave and long-wave infrared spectral regions. Along with interband cascade lasers, these devices are the only room-temperature lasers that directly convert electrical power into mid- and long-infrared optical power. In this paper, we review the progress in high-power quantum cascade lasers made over the last 10 years. Specifically, an overview of the most important active region, waveguide, and thermal design techniques is presented, and various aspects of die packaging for high-power applications are discussed. Prospects of power scaling with lateral device dimensions for reaching optical power level in the range from 10 W to 20 W are also analyzed. Finally, coherent and spectral beam-combining techniques for very high-power infrared platforms are discussed.

Continuous wave operation of buried heterostructure 4.6 µm quantum cascade laser Y-junctions and tree arrays.

Room-temperature continuous-wave operation for buried heterostructure 4.6 µm quantum cascade laser Y-junctions and tree arrays, overgrown using hydride vapor phase epitaxy, has been demonstrated. Pulsed wall plug efficiency for the Y-junctions with bending radius of 5mm was measured to be very similar to that of single-emitter lasers from the same material, indicating low coupling losses. Comparison between model and experimental data showed that the in-phase mode was dominating for 10mm-long Y-junctions with 5 µm-wide 1mm-long stem and 5 µm-wide branches. Total optical power over 1.5 W was demonstrated for four-branch QCL tree array.

Multiwatt long wavelength quantum cascade lasers based on high strain composition with 70% injection efficiency.

A strain-balanced, AlInAs/InGaAs/InP quantum cascade laser structure, designed for light emission near 9 µm, was grown by molecular beam epitaxy. Laser devices were processed in buried heterostructure geometry. Maximum pulsed and continuous wave room temperature optical power of 4.5 and 2 W and wallplug efficiency of 16% and 10%, respectively, were demonstrated for a 3mm by 10 µm laser mounted epi-side down on an AlN/SiC composite submount. Pulsed laser characteristics were shown to be self-consistently described by a simple model based on rate equations using measured 70% injection efficiency for the upper laser level.

Tapered 4.7 µm quantum cascade lasers with highly strained active region composition delivering over 4.5 watts of continuous wave optical power.

A strain-balanced, Al0.7In0.22As/In0.72Ga0.28As/InP quantum cascade laser structure, designed for light emission at 4.7µm using the non-resonant extraction design approach, was grown by molecular beam epitaxy. Laser devices were processed in tapered buried heterostructure geometry and then mounted on AlN/SiC composite submounts using hard solder. A 10 mm long laser with 7.5µm-wide central section tapered up to 20µm at laser facets generated over 4.5W of single-ended CW/RT optical power at 283K. Maximum wallplug efficiency of 16.3% for this laser was reached at 4W level. Reliability of over 2,000h has been demonstrated for an air-cooled system delivering optical power of 3W in a collimated beam with overall system efficiency exceeding 10%.

λ~7.1 µm quantum cascade lasers with 19% wall-plug efficiency at room temperature.

Strain-balanced In0.6Ga0.4As/Al0.56In0.44As quantum cascade lasers emitting at a wavelength of 7.1 µm are reported. The active region is based on a three-phonon-resonance quantum design with a low voltage defect of 120 meV at injection resonance. A maximum wall-plug efficiency of 19% is demonstrated in pulsed mode at 293 K. Continuous-wave output power of 1.4 W and wall-plug efficiency of 10% are measured at the same temperature, as well as 1.2 W of average power in uncooled operation. A model for backfilling of the lower laser level which takes into account the number of subbands in the injector is presented and applied to determine the optimum value of the voltage defect to maximize wall-plug efficiency at room temperature, which is found to be ~100 meV, in good agreement with experimental results.

Activation energy study of electron transport in high performance short wavelengths quantum cascade lasers.

We present a method to study current paths through quantum cascade lasers (QCLs). The temperature dependence of the current is measured at a fixed voltage. At low temperatures we find activation energies that correspond to the energy difference between the injector ground state and the upper laser level. At higher temperatures additional paths with larger activation energies are found. Application of this method to high performance QCLs based on strained InGaAs/InAlAs quantum wells and barriers with different band-offsets allows us to identify individual parasitic current paths through the devices. The results give insight into the transport properties of quantum cascade lasers thus providing a useful tool for device optimization.